CTD03N3P3 MOSFET. Datasheet pdf. Equivalent
Type Designator: CTD03N3P3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 98 nC
trⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 911 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: TO-252
CTD03N3P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTD03N3P3 Datasheet (PDF)
ctd03n3p3.pdf
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ctd03n4p3.pdf
nvertCTD03N4P3Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and
ctd03n4p6.pdf
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ctd03n8p5.pdf
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ctd03n10p5.pdf
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ctd03n005.pdf
nvertCTD03N005Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and
ctd03n003.pdf
nvertCTD03N003Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
