CTD03N3P3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CTD03N3P3
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 107 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 150 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 98 nC
Время нарастания (tr): 44 ns
Выходная емкость (Cd): 911 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0033 Ohm
Тип корпуса: TO-252
CTD03N3P3 Datasheet (PDF)
ctd03n3p3.pdf
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ctd03n4p3.pdf
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ctd03n4p6.pdf
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ctd03n8p5.pdf
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ctd03n10p5.pdf
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ctd03n005.pdf
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ctd03n003.pdf
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