CTD06N030 MOSFET. Datasheet pdf. Equivalent
Type Designator: CTD06N030
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 12.6 nC
trⓘ - Rise Time: 14.2 nS
Cossⓘ - Output Capacitance: 86 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-252
CTD06N030 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTD06N030 Datasheet (PDF)
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