CTP10N066 Datasheet and Replacement
Type Designator: CTP10N066
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: TO-220
CTP10N066 substitution
CTP10N066 Datasheet (PDF)
ctp10n066.pdf

nvertCTP10N066Suzhou Convert Semiconductor Co ., Ltd.100V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
ctp10p095.pdf

nvertCTP10P095Suzhou Convert Semiconductor Co ., Ltd.100V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
Datasheet: CTP06N7P5 , CTD10N033 , CTD10N100 , CTD10P650 , CTN04N7P5 , CTN04PN035 , CTP03N2P7 , CTP06N6P8 , IRF9640 , CTP10P095 , CTQ06N085 , CTS03P015 , CTS03PP055 , CTU03N8P5 , CTU10P060 , CTU20N170 , CTU20N700 .
History: NVMTS0D6N04C
Keywords - CTP10N066 MOSFET datasheet
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History: NVMTS0D6N04C



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