All MOSFET. CTQ06N085 Datasheet

 

CTQ06N085 Datasheet and Replacement


   Type Designator: CTQ06N085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT223
 

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CTQ06N085 Datasheet (PDF)

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CTQ06N085

nvertCTQ06N085Suzhou Convert Semiconductor Co ., Ltd.60V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS High frequency DC-DC converters Power switching applicationDevice Marking and Package InformationDevice Package MarkingCTQ06N085 SOT223 602Absolute

Datasheet: CTD10N100 , CTD10P650 , CTN04N7P5 , CTN04PN035 , CTP03N2P7 , CTP06N6P8 , CTP10N066 , CTP10P095 , MMD60R360PRH , CTS03P015 , CTS03PP055 , CTU03N8P5 , CTU10P060 , CTU20N170 , CTU20N700 , CTZ2302A , CTZ2305A .

History: OSG70R1K4FF | PFB2N60

Keywords - CTQ06N085 MOSFET datasheet

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