All MOSFET. CTQ06N085 Datasheet


CTQ06N085 MOSFET. Datasheet pdf. Equivalent

Type Designator: CTQ06N085

Marking Code: 602

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 5.5 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 148 pF

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: SOT223

CTQ06N085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CTQ06N085 Datasheet (PDF)

0.1. ctq06n085.pdf Size:552K _convert


nvertCTQ06N085Suzhou Convert Semiconductor Co ., Ltd.60V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS High frequency DC-DC converters Power switching applicationDevice Marking and Package InformationDevice Package MarkingCTQ06N085 SOT223 602Absolute

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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