CTQ06N085 PDF and Equivalents Search

 

CTQ06N085 Specs and Replacement


   Type Designator: CTQ06N085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT223
 

 CTQ06N085 substitution

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CTQ06N085 datasheet

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CTQ06N085

nvert CTQ06N085 Suzhou Convert Semiconductor Co ., Ltd. 60V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS High frequency DC-DC converters Power switching application Device Marking and Package Information Device Package Marking CTQ06N085 SOT223 602 Absolute... See More ⇒

Detailed specifications: CTD10N100 , CTD10P650 , CTN04N7P5 , CTN04PN035 , CTP03N2P7 , CTP06N6P8 , CTP10N066 , CTP10P095 , RU7088R , CTS03P015 , CTS03PP055 , CTU03N8P5 , CTU10P060 , CTU20N170 , CTU20N700 , CTZ2302A , CTZ2305A .

History: 2N7002NT1

Keywords - CTQ06N085 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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