CTS03PP055 MOSFET. Datasheet pdf. Equivalent
Type Designator: CTS03PP055
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5.1 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 6.8 nC
trⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 98 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOP-8
CTS03PP055 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTS03PP055 Datasheet (PDF)
cts03pp055.pdf
nvertCTS03PP055Suzhou Convert Semiconductor Co ., Ltd.P-Channel Logic Level Enhancement Mode Power MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switch Power Management Pulse Width Modulation(PWM)D
cts03p015.pdf
nvertCTS03P015Suzhou Convert Semiconductor Co ., Ltd.30V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load switch Uninterruptible Power Supply (UPS) Pulse Width Modulation(PWM)Device M
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IXFX88N20Q | APT10M25BVFR
History: IXFX88N20Q | APT10M25BVFR
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918