CTS03PP055 Datasheet and Replacement
Type Designator: CTS03PP055
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.1 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 98 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOP-8
- MOSFET Cross-Reference Search
CTS03PP055 Datasheet (PDF)
cts03pp055.pdf

nvertCTS03PP055Suzhou Convert Semiconductor Co ., Ltd.P-Channel Logic Level Enhancement Mode Power MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switch Power Management Pulse Width Modulation(PWM)D
cts03p015.pdf

nvertCTS03P015Suzhou Convert Semiconductor Co ., Ltd.30V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load switch Uninterruptible Power Supply (UPS) Pulse Width Modulation(PWM)Device M
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CJAB25P03 | HLML6401 | HU60P03 | AM10N30-600I | IRF242 | IPB60R045P7 | AP85T03GH-HF
Keywords - CTS03PP055 MOSFET datasheet
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History: CJAB25P03 | HLML6401 | HU60P03 | AM10N30-600I | IRF242 | IPB60R045P7 | AP85T03GH-HF



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