CTS03PP055 MOSFET. Datasheet pdf. Equivalent
Type Designator: CTS03PP055
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 5.1 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 6.8 nC
Rise Time (tr): 64 nS
Drain-Source Capacitance (Cd): 98 pF
Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm
Package: SOP-8
CTS03PP055 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTS03PP055 Datasheet (PDF)
0.1. cts03pp055.pdf 
Size:724K _convert
nvertCTS03PP055Suzhou Convert Semiconductor Co ., Ltd.P-Channel Logic Level Enhancement Mode Power MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switch Power Management Pulse Width Modulation(PWM)D
8.1. cts03p015.pdf Size:616K _convert
nvertCTS03P015Suzhou Convert Semiconductor Co ., Ltd.30V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load switch Uninterruptible Power Supply (UPS) Pulse Width Modulation(PWM)Device M
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