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CTU10P060 Specs and Replacement


   Type Designator: CTU10P060
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 74.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 32.2 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-251
 

 CTU10P060 substitution

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CTU10P060 Specs

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CTU10P060

nvert CTU10P060 Suzhou Convert Semiconductor Co ., Ltd. 100V P-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an... See More ⇒

Detailed specifications: CTP03N2P7 , CTP06N6P8 , CTP10N066 , CTP10P095 , CTQ06N085 , CTS03P015 , CTS03PP055 , CTU03N8P5 , 60N06 , CTU20N170 , CTU20N700 , CTZ2302A , CTZ2305A , CTZ2312A , CJ2324 , CJ3134KDW , CJ3139KDW .

Keywords - CTU10P060 MOSFET specs

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