CTU10P060 MOSFET. Datasheet pdf. Equivalent
Type Designator: CTU10P060
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 74.9 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 92 nC
Rise Time (tr): 32.2 nS
Drain-Source Capacitance (Cd): 223 pF
Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
Package: TO-251
CTU10P060 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTU10P060 Datasheet (PDF)
0.1. ctu10p060.pdf 
Size:706K _convert
nvertCTU10P060Suzhou Convert Semiconductor Co ., Ltd.100V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
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