All MOSFET. CTU10P060 Datasheet

 

CTU10P060 MOSFET. Datasheet pdf. Equivalent

Type Designator: CTU10P060

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 74.9 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 92 nC

Rise Time (tr): 32.2 nS

Drain-Source Capacitance (Cd): 223 pF

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: TO-251

CTU10P060 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CTU10P060 Datasheet (PDF)

0.1. ctu10p060.pdf Size:706K _convert

CTU10P060
CTU10P060

nvertCTU10P060Suzhou Convert Semiconductor Co ., Ltd.100V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an

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