All MOSFET. CTU10P060 Datasheet

 

CTU10P060 Datasheet and Replacement


   Type Designator: CTU10P060
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 74.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 32.2 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-251
 

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CTU10P060 Datasheet (PDF)

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CTU10P060

nvertCTU10P060Suzhou Convert Semiconductor Co ., Ltd.100V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an

Datasheet: CTP03N2P7 , CTP06N6P8 , CTP10N066 , CTP10P095 , CTQ06N085 , CTS03P015 , CTS03PP055 , CTU03N8P5 , IRFB7545 , CTU20N170 , CTU20N700 , CTZ2302A , CTZ2305A , CTZ2312A , CJ2324 , CJ3134KDW , CJ3139KDW .

History: 2SK2665

Keywords - CTU10P060 MOSFET datasheet

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