CTU20N700 Datasheet and Replacement
Type Designator: CTU20N700
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO-251
CTU20N700 substitution
CTU20N700 Datasheet (PDF)
ctu20n700.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CTU20N700200V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Power switching application Uninterruptible Power Supply Hard switched and high frequency circuitsDev
ctu20n170.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CTU20N170200V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency cir
Datasheet: CTP10N066 , CTP10P095 , CTQ06N085 , CTS03P015 , CTS03PP055 , CTU03N8P5 , CTU10P060 , CTU20N170 , IRFP064N , CTZ2302A , CTZ2305A , CTZ2312A , CJ2324 , CJ3134KDW , CJ3139KDW , CJ3434 , CJ3439KDW .
Keywords - CTU20N700 MOSFET datasheet
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