CTU20N700 MOSFET. Datasheet pdf. Equivalent
Type Designator: CTU20N700
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 42 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 2.8 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 15 nC
Rise Time (tr): 34 nS
Drain-Source Capacitance (Cd): 130 pF
Maximum Drain-Source On-State Resistance (Rds): 0.7 Ohm
Package: TO-251
CTU20N700 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTU20N700 Datasheet (PDF)
0.1. ctu20n700.pdf 
Size:987K _convert
nvertSuzhou Convert Semiconductor Co ., Ltd.CTU20N700200V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Power switching application Uninterruptible Power Supply Hard switched and high frequency circuitsDev
8.1. ctu20n170.pdf Size:752K _convert
nvertSuzhou Convert Semiconductor Co ., Ltd.CTU20N170200V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency cir
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