All MOSFET. CJ2324 Datasheet

 

CJ2324 Datasheet and Replacement


   Type Designator: CJ2324
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 39(max) nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.234 Ohm
   Package: SOT23
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CJ2324 Datasheet (PDF)

 ..1. Size:1092K  jiangsu
 cj2324.pdf pdf_icon

CJ2324

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETsCJ2324 N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 234m@10V100V 267m@6V2A1. GATE 278m@4.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET DC/DC Converters Low RDS(ON) Load Switch Surface Mount Package LED Backlighting in LCD TVs

 9.1. Size:1198K  jiangsu
 cj2321.pdf pdf_icon

CJ2324

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 57m@-4.5V-20V 76m@-2.5V-2.9A1. GATE 110m@-1.8V 2. SOURCE 3. DRAIN APPLICATION FEATURE PA Switch TrenchFET Power MOSFET Load Switch MARKING Equivalent Circuit Maximum ratings (Ta=25 unl

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History: WMM11N80M3 | FDMS9620S | HGS120N10SL | IRFI7536G | AON7240

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