All MOSFET. CJ3139KDW Datasheet

 

CJ3139KDW Datasheet and Replacement


   Type Designator: CJ3139KDW
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.66 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 25(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: SOT363
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CJ3139KDW Datasheet (PDF)

 ..1. Size:2229K  jiangsu
 cj3139kdw.pdf pdf_icon

CJ3139KDW

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETsCJ3139KDW Dual P-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 95 1 8 TYP GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). Includi

 7.1. Size:436K  jiangsu
 cj3139k.pdf pdf_icon

CJ3139KDW

P-Channel MOSFET ID V(BR)DSS RDS(on)MAX 95 1 8 TYP 1. GATE 2. SOURCE 3. DRAIN Lead Free Product is Acquired Load/Power Switching Surface Mount Package Inte

 7.2. Size:2431K  jiangsu
 cj3139kw.pdf pdf_icon

CJ3139KDW

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETSCJ3139KW P-Channel Power MOSFETSOT-323 ID V(BR)DSS RDS(on)MAX 95 1 8 TYP 1. GATE 2. SOURCE GENERRAL DESCRIPTION 3. DRAIN This Single P-Channel MOSFET has been designed using advanced Power Trench process to opti

 7.3. Size:1850K  cn tech public
 pcj3139k.pdf pdf_icon

CJ3139KDW

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