CJ3139KDW Specs and Replacement

Type Designator: CJ3139KDW

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.66 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.8 nS

Cossⓘ - Output Capacitance: 25 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm

Package: SOT363

CJ3139KDW substitution

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CJ3139KDW datasheet

 ..1. Size:2229K  jiangsu
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CJ3139KDW

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs CJ3139KDW Dual P-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 95 1 8 TYP GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). Includi... See More ⇒

 7.1. Size:436K  jiangsu
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CJ3139KDW

P-Channel MOSFET ID V(BR)DSS RDS(on)MAX 95 1 8 TYP 1. GATE 2. SOURCE 3. DRAIN Lead Free Product is Acquired Load/Power Switching Surface Mount Package Inte... See More ⇒

 7.2. Size:2431K  jiangsu
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CJ3139KDW

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ3139KW P-Channel Power MOSFET SOT-323 ID V(BR)DSS RDS(on)MAX 95 1 8 TYP 1. GATE 2. SOURCE GENERRAL DESCRIPTION 3. DRAIN This Single P-Channel MOSFET has been designed using advanced Power Trench process to opti... See More ⇒

 7.3. Size:1850K  cn tech public
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CJ3139KDW

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Detailed specifications: CTU10P060, CTU20N170, CTU20N700, CTZ2302A, CTZ2305A, CTZ2312A, CJ2324, CJ3134KDW, 20N60, CJ3434, CJ3439KDW, CJ4459, CJ7252KDW, CJA03N10S, CJAA3134K, CJAA3139K, CJAB20N03

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.