All MOSFET. SSH4N80AS Datasheet

 

SSH4N80AS Datasheet and Replacement


   Type Designator: SSH4N80AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO3P
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SSH4N80AS Datasheet (PDF)

 ..1. Size:211K  samsung
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SSH4N80AS

SSH4N80ASAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2. (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charac

 7.1. Size:276K  semelab
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SSH4N80AS

 9.1. Size:178K  1
ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf pdf_icon

SSH4N80AS

 9.2. Size:165K  fairchild semi
ssh4n90.pdf pdf_icon

SSH4N80AS

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMM11N80M3 | FDMS9620S | HGS120N10SL | IRFI7536G | AON7240

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