CJAC110N03 MOSFET PDF: N-Ch, 30V, 110A. Full specification with pinout and replacement list

CJAC110N03 PDF Specs and Replacement

   Type Designator: CJAC110N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 677 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: PDFNWB5X6-8L

CJAC110N03 substitution

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CJAC110N03 PDF Specs

..1. Size:2101K 1
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.8m @10V 30 V 110A 3.5m @4.5V DESCRIPTION FEATURES... See More ⇒

..2. Size:2101K jiangsu
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7.1. Size:2395K 1
cjac110sn10a.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110SN10A N-Channel Power MOSFET PDFN 5 6-8L V(BR)DSS RDS(onTYP ID 3.4m @10V 100V 110A 4.5m @4.5V DESCRIPTION The CJAC110SN10A uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA... See More ⇒

7.2. Size:1662K 1
cjac110sn10.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFET PDFN 5 6-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m @10V 110A DESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig... See More ⇒