All MOSFET. CJAC20N10 Datasheet

 

CJAC20N10 Datasheet and Replacement


   Type Designator: CJAC20N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: PDFNWB5X6-8L
 

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CJAC20N10 Datasheet (PDF)

 ..1. Size:2232K  1
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CJAC20N10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5X6-8L Plastic-Encapsulate MOSFETS CJAC20N10 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 31 10 20 40 DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a dra

 ..2. Size:2232K  jiangsu
 cjac20n10.pdf pdf_icon

CJAC20N10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5X6-8L Plastic-Encapsulate MOSFETS CJAC20N10 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 31 10 20 40 DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a dra

 7.1. Size:1729K  1
 cjac20n03.pdf pdf_icon

CJAC20N10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC20N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAC20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

 7.2. Size:1729K  jiangsu
 cjac20n03.pdf pdf_icon

CJAC20N10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC20N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAC20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

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Datasheet: CJAC100SN08 , CJAC10H02 , CJAC10TH10 , CJAC110N03 , CJAC110SN10 , CJAC13TH06 , CJAC150N03 , CJAC20N03 , IRF9540N , CJAC40N04 , CJAC50P03 , CJAC70N03 , CJAC75SN10 , CJAC80N03 , CJAC90SN12 , CJAE2002 , CJBA3134K .

History: IXTM12N50

Keywords - CJAC20N10 MOSFET datasheet

 CJAC20N10 cross reference
 CJAC20N10 equivalent finder
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