CJAC20N10 Specs and Replacement

Type Designator: CJAC20N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 10 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: PDFNWB5X6-8L

CJAC20N10 substitution

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CJAC20N10 datasheet

 ..1. Size:2232K  1
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CJAC20N10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5X6-8L Plastic-Encapsulate MOSFETS CJAC20N10 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB5 6-8L 31 10 20 40 DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a dra... See More ⇒

 ..2. Size:2232K  jiangsu
cjac20n10.pdf pdf_icon

CJAC20N10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5X6-8L Plastic-Encapsulate MOSFETS CJAC20N10 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB5 6-8L 31 10 20 40 DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a dra... See More ⇒

 7.1. Size:1729K  1
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CJAC20N10

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 7.2. Size:1729K  jiangsu
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CJAC20N10

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Detailed specifications: CJAC100SN08, CJAC10H02, CJAC10TH10, CJAC110N03, CJAC110SN10, CJAC13TH06, CJAC150N03, CJAC20N03, IRF9540N, CJAC40N04, CJAC50P03, CJAC70N03, CJAC75SN10, CJAC80N03, CJAC90SN12, CJAE2002, CJBA3134K

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs