CJAC80N03
MOSFET. Datasheet pdf. Equivalent
Type Designator: CJAC80N03
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 80
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 54
nC
trⓘ - Rise Time: 44
nS
Cossⓘ -
Output Capacitance: 420
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042
Ohm
Package: PDFNWB5X6-8L
CJAC80N03
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJAC80N03
Datasheet (PDF)
..1. Size:2399K 1
cjac80n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC80N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 3.0m@10V30 V80A4.3m@4.5VDESCRIPTION The CJAC80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
..2. Size:2399K jiangsu
cjac80n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC80N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 3.0m@10V30 V80A4.3m@4.5VDESCRIPTION The CJAC80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
8.1. Size:3986K 1
cjac80sn10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC80SN10 N-Channel Power MOSFET PDFN 56-8L ID V(BR)DSS RDS(on)TYP6.2m@10V100 V80A8.8m@4.5VDESCRIPTION The CJAC80SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEAT
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