CJAC80N03 Datasheet and Replacement
Type Designator: CJAC80N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: PDFNWB5X6-8L
CJAC80N03 substitution
CJAC80N03 Datasheet (PDF)
cjac80n03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC80N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 3.0m@10V30 V80A4.3m@4.5VDESCRIPTION The CJAC80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
cjac80n03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC80N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 3.0m@10V30 V80A4.3m@4.5VDESCRIPTION The CJAC80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
cjac80sn10.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC80SN10 N-Channel Power MOSFET PDFN 56-8L ID V(BR)DSS RDS(on)TYP6.2m@10V100 V80A8.8m@4.5VDESCRIPTION The CJAC80SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEAT
Datasheet: CJAC13TH06 , CJAC150N03 , CJAC20N03 , CJAC20N10 , CJAC40N04 , CJAC50P03 , CJAC70N03 , CJAC75SN10 , 8205A , CJAC90SN12 , CJAE2002 , CJBA3134K , CJBA3139K , CJBA3541K , CJBA7002K , CJBB3134K , CJBB3139K .
History: RFP5P12 | IRF820ASPBF | IRFY430CM
Keywords - CJAC80N03 MOSFET datasheet
CJAC80N03 cross reference
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History: RFP5P12 | IRF820ASPBF | IRFY430CM



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