CJAC80N03 Specs and Replacement

Type Designator: CJAC80N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: PDFNWB5X6-8L

CJAC80N03 substitution

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CJAC80N03 datasheet

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CJAC80N03

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CJAC80N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC80SN10 N-Channel Power MOSFET PDFN 5 6-8L ID V(BR)DSS RDS(on)TYP 6.2m @10V 100 V 80A 8.8m @4.5V DESCRIPTION The CJAC80SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEAT... See More ⇒

Detailed specifications: CJAC13TH06, CJAC150N03, CJAC20N03, CJAC20N10, CJAC40N04, CJAC50P03, CJAC70N03, CJAC75SN10, IRFP260, CJAC90SN12, CJAE2002, CJBA3134K, CJBA3139K, CJBA3541K, CJBA7002K, CJBB3134K, CJBB3139K

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