All MOSFET. CJBA3139K Datasheet

 

CJBA3139K Datasheet and Replacement


   Type Designator: CJBA3139K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.66 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.7 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: DFN1006-3
 

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CJBA3139K Datasheet (PDF)

 ..1. Size:1591K  jiangsu
 cjba3139k.pdf pdf_icon

CJBA3139K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L Plastic-Encapsulate MOSFETsCJBA3139K P-Channel MOSFETID V(BR)DSS RDS(on)MAX DFN1006-3L m@-4.5V520-20V-0.66Am@-2.5V780950m(TYP)@-1.8V FEATURE APPLICATION Lead Free Product is Acquired Load/ Power Switching Surface Mount Package Interfacing Switching P-Channel Switch with Low RDS(on)

 7.1. Size:1392K  jiangsu
 cjba3134k.pdf pdf_icon

CJBA3139K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L Plastic-Encapsulate MOSFETsCJBA3134K N-Channel MOSFETID V(BR)DSS RDS(on)MAX DFN1006-3L m@4.5V50020Vm@2.5V 0.75A700m@1.8V900FEATURE APPLICATION Lead Free Product is Acquired Load/ Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Ba

 9.1. Size:474K  jiangsu
 cjba3541k.pdf pdf_icon

CJBA3139K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L Plastic-Encapsulate MOSFETsCJBA3541K N-Channel MOSFETID V(BR)DSS RDS(on)MAX DFN1006-3L m@4.5V5000.6A30Vm@2.5V600FEATURE APPLICATION Lead Free Product is Acquired Load/ Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for

Datasheet: CJAC40N04 , CJAC50P03 , CJAC70N03 , CJAC75SN10 , CJAC80N03 , CJAC90SN12 , CJAE2002 , CJBA3134K , K4145 , CJBA3541K , CJBA7002K , CJBB3134K , CJBB3139K , CJBD3020 , CJBE5005 , CJBM3020 , CEC2088E .

Keywords - CJBA3139K MOSFET datasheet

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