CJBA3139K Specs and Replacement
Type Designator: CJBA3139K
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: DFN1006-3
CJBA3139K substitution
- MOSFET ⓘ Cross-Reference Search
CJBA3139K datasheet
cjba3139k.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L Plastic-Encapsulate MOSFETs CJBA3139K P-Channel MOSFET ID V(BR)DSS RDS(on)MAX DFN1006-3L m @-4.5V 520 -20V -0.66A m @-2.5V 780 950m (TYP)@-1.8V FEATURE APPLICATION Lead Free Product is Acquired Load/ Power Switching Surface Mount Package Interfacing Switching P-Channel Switch with Low RDS(on)... See More ⇒
cjba3134k.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L Plastic-Encapsulate MOSFETs CJBA3134K N-Channel MOSFET ID V(BR)DSS RDS(on)MAX DFN1006-3L m @4.5V 500 20V m @2.5V 0.75A 700 m @1.8V 900 FEATURE APPLICATION Lead Free Product is Acquired Load/ Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Ba... See More ⇒
cjba3541k.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L Plastic-Encapsulate MOSFETs CJBA3541K N-Channel MOSFET ID V(BR)DSS RDS(on)MAX DFN1006-3L m @4.5V 500 0.6A 30V m @2.5V 600 FEATURE APPLICATION Lead Free Product is Acquired Load/ Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for... See More ⇒
Detailed specifications: CJAC40N04, CJAC50P03, CJAC70N03, CJAC75SN10, CJAC80N03, CJAC90SN12, CJAE2002, CJBA3134K, K4145, CJBA3541K, CJBA7002K, CJBB3134K, CJBB3139K, CJBD3020, CJBE5005, CJBM3020, CEC2088E
Keywords - CJBA3139K MOSFET specs
CJBA3139K cross reference
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CJBA3139K replacement
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History: WML28N60F2
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