CEU20N02 MOSFET Datasheet: N-Ch, 20V, 18A. Full specification with pinout and replacement list

CEU20N02 Specs and Replacement

   Type Designator: CEU20N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO252

CEU20N02 substitution

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CEU20N02 datasheet

..1. Size:237K cet
ced20n02 ceu20n02.pdf pdf_icon

CED20N02/CEU20N02 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 18A, RDS(ON) = 42m @VGS = 4.5V. RDS(ON) = 75m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXI... See More ⇒

7.1. Size:808K cn vbsemi
ceu20n06.pdf pdf_icon

CEU20N06 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no... See More ⇒

9.1. Size:373K cet
ced20p10 ceu20p10.pdf pdf_icon

CED20P10/CEU20P10 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -16A, RDS(ON) = 130m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING... See More ⇒

9.2. Size:428K cet
ced20p06 ceu20p06.pdf pdf_icon

CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 175m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE... See More ⇒

Detailed specifications: CJBB3134K , CJBB3139K , CJBD3020 , CJBE5005 , CJBM3020 , CEC2088E , CEC3172 , CED20N02 , AON7506 , CED25N02 , CEU25N02 , CEM2192 , CEM4052 , CEM6056L , CEM9288 , CEN2307A , CEN2321A .