CEN2307A Datasheet and Replacement. Cross Reference Search

CEN2307A Datasheet (PDF)

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CEN2307AP-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Lim

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CEN2301P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23-T package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units

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CEN2321APRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -3.7A, RDS(ON) = 60m @VGS = -4.5V. RDS(ON) = 80m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit

Datasheet: CED20N02 , CEU20N02 , CED25N02 , CEU25N02 , CEM2192 , CEM4052 , CEM6056L , CEM9288 , STF13NM60N , CEN2321A , CEB6086 , CEF9060N , CEB93A3 , CES2322 , CEZ3P08 , CEZ3R04 , CJCD2003 .