All MOSFET. CJCD2005 Datasheet

 

CJCD2005 Datasheet and Replacement


   Type Designator: CJCD2005
   Marking Code: 2005
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFNWB2X3-6L-C
 

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CJCD2005 Datasheet (PDF)

 ..1. Size:1794K  jiangsu
 cjcd2005.pdf pdf_icon

CJCD2005

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDFNWB23-6L-C Plastic-Encapsulate MOSFETS DFNWB23-6L-CCJCD2005 Dual N-Channel MOSFETIDV(BR)DSS RDS(on)TYP m@4.5V9@4.0V m9.58A20V 9.7m@3.8Vm@3.1V10.612.5m@2.5VDESCRIPTION The CJCD2005 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This dev

 7.1. Size:1698K  jiangsu
 cjcd2004.pdf pdf_icon

CJCD2005

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDFNWB23-6L-C Plastic-Encapsulate MOSFETS DFNWB23-6L-CCJCD2004 Dual N-Channel MOSFET IDV(BR)DSS RDS(on)TYP m 7.3@4.5V m 7.6 @4.0V20V10A7.8m@3.8V8.2m@3.1Vm9.0@2.5VDESCRIPTION The CJCD2004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected

 7.2. Size:1603K  jiangsu
 cjcd2003.pdf pdf_icon

CJCD2005

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDFNWB23-6L-C Plastic-Encapsulate MOSFETS DFNWB23-6L-CCJCD2003 Dual N-Channel MOSFETIDV(BR)DSS RDS(on)TYP 6.2 m@4.5V m 6.4 @4.0V18V10Am 6.8 @3.8VV 7.2 m@3.1 8.2 m@2.5VDESCRIPTION The CJCD2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected.

 7.3. Size:1507K  jiangsu
 cjcd2007.pdf pdf_icon

CJCD2005

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB23-6L-C Plastic-Encapsulate MOSFETS DFNWB23-6L-CCJCD2007 Dual N-Channel MOSFETIDV(BR)DSS RDS(on)TYP m12.5 @4.5V m13 @4.0V20V8Am@3.8V 13.5m@3.1V 14.5m 17 @2.5VDESCRIPTION The CJCD2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected

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