CJCD2005 - аналоги, параметры транзистора - Справочник транзисторов

CJCD2005 даташит

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 3-6L-C Plastic-Encapsulate MOSFETS DFNWB2 3-6L-C CJCD2005 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP m @4.5V 9 @4.0V m 9.5 8A 20V 9.7m @3.8V m @3.1V 10.6 12.5 m @2.5V DESCRIPTION The CJCD2005 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This dev

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 3-6L-C Plastic-Encapsulate MOSFETS DFNWB2 3-6L-C CJCD2004 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP m 7.3 @4.5V m 7.6 @4.0V 20V 10A 7.8m @3.8V 8.2m @3.1 V m 9.0 @2.5V DESCRIPTION The CJCD2004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected

7.2. Size:1603K jiangsu
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 3-6L-C Plastic-Encapsulate MOSFETS DFNWB2 3-6L-C CJCD2003 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP 6.2 m @4.5V m 6.4 @4.0V 18V 10A m 6.8 @3.8V V 7.2 m @3.1 8.2 m @2.5V DESCRIPTION The CJCD2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected.

7.3. Size:1507K jiangsu
cjcd2007.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 3-6L-C Plastic-Encapsulate MOSFETS DFNWB2 3-6L-C CJCD2007 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP m 12.5 @4.5V m 13 @4.0V 20V 8A m @3.8V 13.5 m @3.1V 14.5 m 17 @2.5V DESCRIPTION The CJCD2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected

Другие MOSFET... CEB6086 , CEF9060N , CEB93A3 , CES2322 , CEZ3P08 , CEZ3R04 , CJCD2003 , CJCD2004 , IRF520 , CJCD2007 , CJDE8404 , CJE3134K , CJE3139K , CJFB30H20 , CJK1211 , CJK1508 , CJK2009 .