All MOSFET. CJK3400A Datasheet

 

CJK3400A MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJK3400A
   Marking Code: R0A_.R0A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7(max) nS
   Cossⓘ - Output Capacitance: 108 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOT23

 CJK3400A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJK3400A Datasheet (PDF)

 ..1. Size:715K  jiangsu
 cjk3400a.pdf

CJK3400A CJK3400A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400A N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L 32m@10V30V 38m@4.5V5.8A45m@2.5V1. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-r

 0.1. Size:1664K  jiangsu
 cjk3400ah.pdf

CJK3400A CJK3400A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400AH N-Channel Enhancement Mode Field Effect TransistorID V(BR)DSS RDS(on)MAX SOT-23-3L 27m@10V30V 32m@4.5V5.8A48m@2.5V1. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-resist

 8.1. Size:1634K  jiangsu
 cjk3401ah.pdf

CJK3400A CJK3400A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401AH P-Channel Enhancement Mode Field Effect TransistorID V(BR)DSS RDS(on)MAX SOT-23-3L 50m@-10V-30V -4.2A60 m@-4.5Vm@-2.5V85FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maximum

 8.2. Size:780K  jiangsu
 cjk3401a.pdf

CJK3400A CJK3400A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L m@-10V60 -30V 70 m -4.2A@-4.5Vm@-2.5V851. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devi

 8.3. Size:728K  jiangsu
 cjk3407.pdf

CJK3400A CJK3400A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK34 07 P-Channel 30-V(D-S) MOSFET SOT-23-3L ID V(BR)DSS RDS(on)MAX \60m@-10 V-4.1A-30V 87m@-4.5V1. GATE 2. SOURCE 3. DRAIN DGeneral Description The CJK3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HFS8N70S | AP95T06AGP | FRS234H | HSF4N65

 

 
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