CJL2623 MOSFET. Datasheet pdf. Equivalent
Type Designator: CJL2623
Marking Code: .2623
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.5(max) nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 42 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOT23-6L
CJL2623 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJL2623 Datasheet (PDF)
cjl2623.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETsCJL2623 Dual P-Channel MOSFET SOT-23-6L ID V(BR)DSS RDS(on)MAX 130m@-10V-30 V -3A180m@-4.5VFEATURE APPLICATION TrenchFET Power MOSFET DC/DC converter Low Gate Charge Load switch for portable devices Low On-resistance Commercial-industrial applications Surfac
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IXTH30N60P
History: IXTH30N60P
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918