All MOSFET. CJM1206 Datasheet

 

CJM1206 Datasheet and Replacement


   Type Designator: CJM1206
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: DFNWB2X2-6L-J
 

 CJM1206 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CJM1206 Datasheet (PDF)

 ..1. Size:1816K  jiangsu
 cjm1206.pdf pdf_icon

CJM1206

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MOSFET DFNWB2*2-6L-JID V(BR)DSS RDS(on)MAX m@-4.5V451. DRAIN 2. DRAIN -12V 60 m -6A@-2.5V3. GATE m@-1.8V90 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1206 uses advanced trench technology to provide excellent RDS(on) , low gate

 9.1. Size:1675K  jiangsu
 cjm1216.pdf pdf_icon

CJM1206

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1216 P-Channel Power MOSFET DFNWB22-6L-J ID V(BR)DSS RDS(on)MAX 21m@-4.5V 1. DRAIN -12 -16A V 27m@-2.5V 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and

Datasheet: CJK3401A , CJK3401AH , CJK8804 , CJL2013 , CJL2016 , CJL2301 , CJL2623 , CJL8205A , IRF9640 , CJMNP517 , CJMPD11 , CJND2004 , CJQ07N10 , CJQ4406 , CJQ4435S , CJQ4503 , CJQ4606 .

History: MDI6N65BTH | IXFX180N15P | P0765GTF | AM3933P | QM3010K | IXTH05N250P3HV | S10H16RN

Keywords - CJM1206 MOSFET datasheet

 CJM1206 cross reference
 CJM1206 equivalent finder
 CJM1206 lookup
 CJM1206 substitution
 CJM1206 replacement

 

 
Back to Top

 


 
.