CJM1206 MOSFET Datasheet: P-Ch, 12V, 6A. Full specification with pinout and replacement list

CJM1206 Specs and Replacement

Type Designator: CJM1206

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: DFNWB2X2-6L-J

CJM1206 substitution

- MOSFET ⓘ Cross-Reference Search

CJM1206 datasheet

..1. Size:1816K jiangsu
cjm1206.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MOSFET DFNWB2*2-6L-J ID V(BR)DSS RDS(on)MAX m @-4.5V 45 1. DRAIN 2. DRAIN -12V 60 m -6A @-2.5V 3. GATE m @-1.8V 90 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1206 uses advanced trench technology to provide excellent RDS(on) , low gate... See More ⇒

9.1. Size:1675K jiangsu
cjm1216.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1216 P-Channel Power MOSFET DFNWB2 2-6L-J ID V(BR)DSS RDS(on)MAX 21m @-4.5V 1. DRAIN -12 -16A V 27m @-2.5V 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and... See More ⇒

Detailed specifications: CJK3401A, CJK3401AH, CJK8804, CJL2013, CJL2016, CJL2301, CJL2623, CJL8205A, K2611, CJMNP517, CJMPD11, CJND2004, CJQ07N10, CJQ4406, CJQ4435S, CJQ4503, CJQ4606