CJQ4503 Specs and Replacement
Type Designator: CJQ4503
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP8
CJQ4503 substitution
- MOSFET ⓘ Cross-Reference Search
CJQ4503 datasheet
cjq4503.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4503 N-and P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP8 28m @10V 30V 6.9A 42m @4.5V 36m @-10V -30 V -6.3A 55m @-4.5V DESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low ... See More ⇒
Detailed specifications: CJL8205A, CJM1206, CJMNP517, CJMPD11, CJND2004, CJQ07N10, CJQ4406, CJQ4435S, IRFP064N, CJQ4606, CJQ4800, CJQ4824, CJQ4828, CJQ6601, CJQ7328, CJQ9926, CJS2013
Keywords - CJQ4503 MOSFET specs
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