CJQ4503 Datasheet and Replacement
Type Designator: CJQ4503
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP8
CJQ4503 substitution
CJQ4503 Datasheet (PDF)
cjq4503.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4503 N-and P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP8 28m@10V 30V6.9A42m@4.5V36m@-10V-30V-6.3A55m@-4.5V DESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low
Datasheet: CJL8205A , CJM1206 , CJMNP517 , CJMPD11 , CJND2004 , CJQ07N10 , CJQ4406 , CJQ4435S , 5N50 , CJQ4606 , CJQ4800 , CJQ4824 , CJQ4828 , CJQ6601 , CJQ7328 , CJQ9926 , CJS2013 .
History: TK18E10K3 | UTC654 | AUIRFP4227 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | AM90N06-04M2B
Keywords - CJQ4503 MOSFET datasheet
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History: TK18E10K3 | UTC654 | AUIRFP4227 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | AM90N06-04M2B



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