CJQ4503 Datasheet and Replacement
Type Designator: CJQ4503
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP8
CJQ4503 Datasheet (PDF)
cjq4503.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4503 N-and P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP8 28m@10V 30V6.9A42m@4.5V36m@-10V-30V-6.3A55m@-4.5V DESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: P7004EM | AOSP21357 | SIHP16N50C | FDP5500
Keywords - CJQ4503 MOSFET datasheet
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History: P7004EM | AOSP21357 | SIHP16N50C | FDP5500



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