CJQ4800 MOSFET. Datasheet pdf. Equivalent
Type Designator: CJQ4800
Marking Code: Q4800
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 6.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7(max) nS
Cossⓘ - Output Capacitance: 93 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOP8
CJQ4800 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJQ4800 Datasheet (PDF)
cjq4800.pdf
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET CJQ4800SOP8 ID V(BR)DSS RDS(on)TYP16m@10V30V 6.9A19m@4.5VDESCRIPTION The CJQ4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: Equivale
cjq4824.pdf
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET CJQ4824SOP8 ID V(BR)DSS RDS(on)TYP10.5m@10V10A30V14.5m@4.5VDESCRIPTION The CJQ4824 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.Equivalent Circ
cjq4828.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4828 Dual N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 56m@10V60V 4.5A77m@ 4.5V DESCRIPTION The CJQ4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Equivalent Ci
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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