CJQ4824
MOSFET. Datasheet pdf. Equivalent
Type Designator: CJQ4824
Marking Code: Q4824
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 8(max)
nS
Cossⓘ -
Output Capacitance: 138
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package:
SOP8
CJQ4824
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJQ4824
Datasheet (PDF)
..1. Size:5643K jiangsu
cjq4824.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET CJQ4824SOP8 ID V(BR)DSS RDS(on)TYP10.5m@10V10A30V14.5m@4.5VDESCRIPTION The CJQ4824 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.Equivalent Circ
8.1. Size:2271K jiangsu
cjq4828.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4828 Dual N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 56m@10V60V 4.5A77m@ 4.5V DESCRIPTION The CJQ4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Equivalent Ci
9.1. Size:1785K jiangsu
cjq4800.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET CJQ4800SOP8 ID V(BR)DSS RDS(on)TYP16m@10V30V 6.9A19m@4.5VDESCRIPTION The CJQ4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: Equivale
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