CJQ4824 Datasheet and Replacement
Type Designator: CJQ4824
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8(max) nS
Cossⓘ - Output Capacitance: 138 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP8
CJQ4824 substitution
CJQ4824 Datasheet (PDF)
cjq4824.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET CJQ4824SOP8 ID V(BR)DSS RDS(on)TYP10.5m@10V10A30V14.5m@4.5VDESCRIPTION The CJQ4824 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.Equivalent Circ
cjq4828.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4828 Dual N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 56m@10V60V 4.5A77m@ 4.5V DESCRIPTION The CJQ4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Equivalent Ci
cjq4800.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET CJQ4800SOP8 ID V(BR)DSS RDS(on)TYP16m@10V30V 6.9A19m@4.5VDESCRIPTION The CJQ4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: Equivale
Datasheet: CJMPD11 , CJND2004 , CJQ07N10 , CJQ4406 , CJQ4435S , CJQ4503 , CJQ4606 , CJQ4800 , IRFZ44N , CJQ4828 , CJQ6601 , CJQ7328 , CJQ9926 , CJS2013 , CJS2016 , CJS2019 , CJS8804 .
History: APT3580BN | RSR030N06
Keywords - CJQ4824 MOSFET datasheet
CJQ4824 cross reference
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History: APT3580BN | RSR030N06



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