All MOSFET. CJS2016 Datasheet

 

CJS2016 Datasheet and Replacement


   Type Designator: CJS2016
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP8
 

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CJS2016 Datasheet (PDF)

 ..1. Size:1556K  jiangsu
 cjs2016.pdf pdf_icon

CJS2016

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETSTSSOP8 CJS2016 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYPm@4.5V15.7 6A20V20 @2.5VmFEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Current Handing Capability

 8.1. Size:1945K  jiangsu
 cjs2019.pdf pdf_icon

CJS2016

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS2019 Dual N-Channel MOSFET TSSOP8 ID V(BR)DSS RDS(on)TYPm@4.5V 19.5 5A20V@2.5V24 mFEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Current Handing Capability

 8.2. Size:2711K  jiangsu
 cjs2013.pdf pdf_icon

CJS2016

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETSCJS2013 Dual N-Channel MOSFET TSSOP8 ID V(BR)DSS RDS(on)TYP10.5 m@4.5V11.4 m@3.8V20 6AV12.3 m@3.1V13.5m@2.5VFEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and

Datasheet: CJQ4606 , CJQ4800 , CJQ4824 , CJQ4828 , CJQ6601 , CJQ7328 , CJQ9926 , CJS2013 , IRF540N , CJS2019 , CJS8804 , CJS8810 , CJS8820 , CJS9004 , CJT04N15 , CJU20N06 , CJU80N03 .

History: BUZ73AL | PMPB12UNEA | SSM3K329R | TK12A55D | MP4N150

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