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CJS2016 Specs and Replacement

Type Designator: CJS2016

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TSSOP8

CJS2016 substitution

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CJS2016 datasheet

 ..1. Size:1556K  jiangsu
 cjs2016.pdf pdf_icon

CJS2016

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS TSSOP8 CJS2016 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP m @4.5V 15.7 6A 20 V 20 @2.5V m FEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Current Handing Capability ... See More ⇒

 8.1. Size:1945K  jiangsu
 cjs2019.pdf pdf_icon

CJS2016

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS2019 Dual N-Channel MOSFET TSSOP8 ID V(BR)DSS RDS(on)TYP m @4.5V 19.5 5A 20 V @2.5V 24 m FEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Current Handing Capability... See More ⇒

 8.2. Size:2711K  jiangsu
 cjs2013.pdf pdf_icon

CJS2016

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS2013 Dual N-Channel MOSFET TSSOP8 ID V(BR)DSS RDS(on)TYP 10.5 m @4.5V 11.4 m @3.8V 20 6A V 12.3 m @3.1V 13.5 m @2.5V FEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and... See More ⇒

Detailed specifications: CJQ4606, CJQ4800, CJQ4824, CJQ4828, CJQ6601, CJQ7328, CJQ9926, CJS2013, IRF540, CJS2019, CJS8804, CJS8810, CJS8820, CJS9004, CJT04N15, CJU20N06, CJU80N03

Keywords - CJS2016 MOSFET specs

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