All MOSFET. CJS8820 Datasheet

 

CJS8820 Datasheet and Replacement


   Type Designator: CJS8820
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TSSOP8
 

 CJS8820 substitution

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CJS8820 Datasheet (PDF)

 ..1. Size:1494K  jiangsu
cjs8820.pdf pdf_icon

CJS8820

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8820 Dual N-Channel MOSFETTSSOP8 ID V(BR)DSS RDS(on)TYP Vm@1014@4.5V 16m20V7Am@3.8V1822m@2.5VDESCRIPTION The CJS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni

 9.1. Size:1311K  jiangsu
cjs8810.pdf pdf_icon

CJS8820

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8810 Dual N-Channel MOSFETTSSOP8 ID V(BR)DSS RDS(on)TYP@4.5V14.2m15.4m@3.8V20V 7A18.2m@2.5V26m@1.8VDESCRIPTION The CJS8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-

 9.2. Size:1162K  jiangsu
cjs8804.pdf pdf_icon

CJS8820

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8804 Dual N-Channel MOSFETTSSOP8 ID V(BR)DSS RDS(on)TYP 9.8 4 10.511.1 8A 2 13.3 19.6DESCRIPTION The CJS8804 use advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This devi

Datasheet: CJQ6601 , CJQ7328 , CJQ9926 , CJS2013 , CJS2016 , CJS2019 , CJS8804 , CJS8810 , IRFP460 , CJS9004 , CJT04N15 , CJU20N06 , CJU80N03 , CJX3134K , CJX3139K , CJX3439K , 2N7002KD .

History: SI4622DY | VBZL80N03

Keywords - CJS8820 MOSFET datasheet

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