All MOSFET. CJS9004 Datasheet

 

CJS9004 Datasheet and Replacement


   Type Designator: CJS9004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TSSOP8
 

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CJS9004 Datasheet (PDF)

 ..1. Size:1999K  jiangsu
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CJS9004

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD Plastic-Encapsulate MOSFETS TSSOP8 TSSOP8 Dual N-Channel MOSFET CJS9004IDV(BR)DSS RDS(on)TYP 5m7.@4.5V0m8.@4.0V20V10Am 8.4 @3.8V8.9 m@3.1V9.7 m@2.5VDESCRIPTION The CJS9004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This devic

Datasheet: CJQ7328 , CJQ9926 , CJS2013 , CJS2016 , CJS2019 , CJS8804 , CJS8810 , CJS8820 , IRF1404 , CJT04N15 , CJU20N06 , CJU80N03 , CJX3134K , CJX3139K , CJX3439K , 2N7002KD , FS2301 .

History: IXFH15N80Q | SSF2341E | STD35NF3LLT4 | IXTT140N10P | LSD65R180GT | LSE65R180HT | SSM6N15FE

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