All MOSFET. CJX3134K Datasheet

 

CJX3134K MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJX3134K
   Marking Code: .34K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT563

 CJX3134K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJX3134K Datasheet (PDF)

 ..1. Size:2634K  jiangsu
 cjx3134k.pdf

CJX3134K CJX3134K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS CJX3134K Dual N-Channel MOSFET SOT-563 ID V(BR)DSS RDS(on)MAX 380m@ 4.5V20V 450m@2.5V0.75A800m@1.8VFEATURE APPLICATION Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low

 8.1. Size:2856K  jiangsu
 cjx3139k.pdf

CJX3134K CJX3134K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS CJ 3139K Dual P-Channel Power MOSFETID V(BR)DSS RDS(on)MAX SOT-563 520m@-4.5V700m@-2.5V-20V-0.66A950m(TYP)@-1.8VGENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSF

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HGA195N15S

 

 
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