CJX3139K Datasheet and Replacement
Type Designator: CJX3139K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 25(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: SOT563
CJX3139K substitution
CJX3139K Datasheet (PDF)
cjx3139k.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS CJ 3139K Dual P-Channel Power MOSFETID V(BR)DSS RDS(on)MAX SOT-563 520m@-4.5V700m@-2.5V-20V-0.66A950m(TYP)@-1.8VGENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSF
cjx3134k.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS CJX3134K Dual N-Channel MOSFET SOT-563 ID V(BR)DSS RDS(on)MAX 380m@ 4.5V20V 450m@2.5V0.75A800m@1.8VFEATURE APPLICATION Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low
Datasheet: CJS8804 , CJS8810 , CJS8820 , CJS9004 , CJT04N15 , CJU20N06 , CJU80N03 , CJX3134K , IRF3710 , CJX3439K , 2N7002KD , FS2301 , FS2302A , FS2312 , FS3415K , DMP4N65 , DMD4N65 .
History: SI8410DB | IPB80N06S2L-11 | AP30T10GK
Keywords - CJX3139K MOSFET datasheet
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History: SI8410DB | IPB80N06S2L-11 | AP30T10GK



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