All MOSFET. DMG4N65 Datasheet

 

DMG4N65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMG4N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 106 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO263

 DMG4N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMG4N65 Datasheet (PDF)

 ..1. Size:4470K  dyelec
dmp4n65 dmd4n65 dmt4n65 dmf4n65 dmk4n65 dmg4n65.pdf

DMG4N65 DMG4N65

4N65650V N-Channel Power MOSFET RDS(ON)

 0.1. Size:273K  diodes
dmg4n65ct.pdf

DMG4N65 DMG4N65

DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25C Low Input/Output Leakage 650V 3.0@VGS = 10V TO220-3 4.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q

 0.2. Size:321K  diodes
dmg4n65cti.pdf

DMG4N65 DMG4N65

DMG4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25C Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 650V 3.0@VGS = 10V ITO220-3 4.0 A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC

 0.3. Size:261K  inchange semiconductor
dmg4n65ct.pdf

DMG4N65 DMG4N65

isc N-Channel MOSFET Transistor DMG4N65CTFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 0.4. Size:252K  inchange semiconductor
dmg4n65cti.pdf

DMG4N65 DMG4N65

isc N-Channel MOSFET Transistor DMG4N65CTIFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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