All MOSFET. SSH6N80AS Datasheet

 

SSH6N80AS Datasheet and Replacement


   Type Designator: SSH6N80AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO3P
 

 SSH6N80AS substitution

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SSH6N80AS Datasheet (PDF)

 ..1. Size:931K  samsung
 ssh6n80as.pdf pdf_icon

SSH6N80AS

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 7.1. Size:272K  semelab
 ssh6n80.pdf pdf_icon

SSH6N80AS

 9.1. Size:307K  1
 ssh6n55 ssh6n60.pdf pdf_icon

SSH6N80AS

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 9.2. Size:946K  samsung
 ssh6n90a.pdf pdf_icon

SSH6N80AS

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

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Datasheet: SSH60N06 , SSH60N06A , SSH60N10 , SSH60N10A , SSH6N55 , SSH6N60 , SSH6N70 , SSH6N70A , RFP50N06 , SSH6N90A , SSH70N10A , SSH7N60A , SSH7N80A , SSH7N90A , SSH80N06A , SSH8N55 , SSH8N60 .

History: NDB7051

Keywords - SSH6N80AS MOSFET datasheet

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