DMG7401SFGQ MOSFET Datasheet: P-Ch, 30V, 9.8A. Full specification with pinout and replacement list

DMG7401SFGQ Specs and Replacement

Type Designator: DMG7401SFGQ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 9.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.4 nS

Cossⓘ - Output Capacitance: 352 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: POWERDI3333-8

DMG7401SFGQ substitution

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DMG7401SFGQ datasheet

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DMG7401SFG P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25 C Small form factor thermally efficient package enables higher density end products 13m @ VGS = -10V -9.8A -30V Occupies just 33% of the board area occupied by SO-8 enabling ... See More ⇒

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DMG7408SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25 C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.0A density end products 30V O... See More ⇒

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DMG7410SFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low RDS(ON) ensures on state losses are minimized ID V(BR)DSS RDS(ON) TA = 25 C Small form factor thermally efficient package enables higher 20m @ VGS = 10V 8.0 A density end products 30V 27m @ VGS = 4.5V 6.5 A Occupies just 33% of the board area occupied by SO-8 ... See More ⇒