All MOSFET. DMG7401SFGQ Datasheet

 

DMG7401SFGQ Datasheet and Replacement


   Type Designator: DMG7401SFGQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 9.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15.4 nS
   Cossⓘ - Output Capacitance: 352 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: POWERDI3333-8
 

 DMG7401SFGQ substitution

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DMG7401SFGQ Datasheet (PDF)

 ..1. Size:464K  diodes
dmg7401sfgq.pdf pdf_icon

DMG7401SFGQ

DMG7401SFGQ P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized BVDSS RDS(ON) Max TA = +25C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 13m @ VGS = -10V -9.8A -30V Occupies Just 33% of The Board Area Occupied by SO-8 25m

 4.1. Size:260K  diodes
dmg7401sfg.pdf pdf_icon

DMG7401SFGQ

DMG7401SFGP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 13m @ VGS = -10V -9.8A -30V Occupies just 33% of the board area occupied by SO-8 enabling

 8.1. Size:151K  diodes
dmg7408sfg.pdf pdf_icon

DMG7401SFGQ

DMG7408SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.0A density end products 30V O

 9.1. Size:198K  diodes
dmg7410sfg.pdf pdf_icon

DMG7401SFGQ

DMG7410SFGGreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low RDS(ON) ensures on state losses are minimized ID V(BR)DSS RDS(ON) TA = 25C Small form factor thermally efficient package enables higher 20m @ VGS = 10V 8.0 A density end products 30V 27m @ VGS = 4.5V 6.5 A Occupies just 33% of the board area occupied by SO-8

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BSC032N03SG

Keywords - DMG7401SFGQ MOSFET datasheet

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