DMG7401SFGQ - Даташиты. Аналоги. Основные параметры
Наименование производителя: DMG7401SFGQ
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 15.4 ns
Cossⓘ - Выходная емкость: 352 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: POWERDI3333-8
Аналог (замена) для DMG7401SFGQ
DMG7401SFGQ Datasheet (PDF)
dmg7401sfgq.pdf

DMG7401SFGQ P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized BVDSS RDS(ON) Max TA = +25C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 13m @ VGS = -10V -9.8A -30V Occupies Just 33% of The Board Area Occupied by SO-8 25m
dmg7401sfg.pdf

DMG7401SFGP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 13m @ VGS = -10V -9.8A -30V Occupies just 33% of the board area occupied by SO-8 enabling
dmg7408sfg.pdf

DMG7408SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.0A density end products 30V O
dmg7410sfg.pdf

DMG7410SFGGreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low RDS(ON) ensures on state losses are minimized ID V(BR)DSS RDS(ON) TA = 25C Small form factor thermally efficient package enables higher 20m @ VGS = 10V 8.0 A density end products 30V 27m @ VGS = 4.5V 6.5 A Occupies just 33% of the board area occupied by SO-8
Другие MOSFET... DMC4029SK4 , DMG1013UWQ , DMG2301L , DMG2301LK , DMG2302UK , DMG2302UQ , DMG2305UXQ , DMG3414UQ , IRLZ44N , DMHT6016LFJ , DMN1002UCA6 , DMN1003UCA6 , DMN1006UCA6 , DMN2009USS , DMN2036UCB4 , DMN2056U , DMN2058U .
History: HMS21N60 | SI4890BDY-T1 | D12N06 | SWI230R45VT | GSM4516W | LNC16N65 | AP20WN170I
History: HMS21N60 | SI4890BDY-T1 | D12N06 | SWI230R45VT | GSM4516W | LNC16N65 | AP20WN170I



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