DMN1002UCA6 MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN1002UCA6
Marking Code: M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 24.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45.7 nC
trⓘ - Rise Time: 2186 nS
Cossⓘ - Output Capacitance: 758 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00275 Ohm
Package: X4-DSN3118-6
DMN1002UCA6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN1002UCA6 Datasheet (PDF)
dmn1002uca6.pdf
DMN1002UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.05mm 1.77mm IS BVSSS RSS(ON) Max Height = 0.11mm for Low Profile TA = +25C ESD Protection of Gate 2.75m @ VGS = 4.5V 24.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.1m @ VGS = 2.5V 16.4A Halogen and Antimony Free. Green D
dmn100.pdf
DMN100N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Extremely Low On-Resistance: 170m @ VGS = 4.5V Case: SC-59 Case Material: Molded Plastic, "Green" Molding Compound. High Drain Current: 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity: Level 1 per J-
dmn1003uca6.pdf
DMN1003UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.54mm 1.77mm IS Height = 0.21mm for Low Profile BVSSS RSS(ON) Max TA = +25C ESD Protection of Gate 3.2m @ VGS = 4.5V 23.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.3m @ VGS = 2.5V 16.8A Halogen and Antimony Free. Green De
dmn1006uca6.pdf
DMN1006UCA6 6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features IS CSP with Footprint 2.70mm 1.81mm BVSSS RSS(ON) MAX TA = +25C Height = 0.21mm for Low Profile ESD Protection of Gate 5.9m @ VGS = 4.5V 16.6A 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 9.0m @ VGS = 2.5V 12.1A Halogen and Antimony Free. Green De
dmn100.pdf
Product specificationDMN100N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Extremely Low On-Resistance: 170m @ VGS = 4.5V Case: SC59 Case Material: Molded Plastic, "Green" Molding Compound. High Drain Current: 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity: Level 1 pe
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100