All MOSFET. DMN3110LCP3 Datasheet

 

DMN3110LCP3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN3110LCP3
   Marking Code: C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.09 nC
   trⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: X2-DSN1006-3

 DMN3110LCP3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN3110LCP3 Datasheet (PDF)

 ..1. Size:578K  diodes
 dmn3110lcp3.pdf

DMN3110LCP3 DMN3110LCP3

DMN3110LCP3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Qg & Qgd BVDSS RDS(ON) Max TA = +25C Small Footprint Low Profile 0.30mm Height 69m @ VGS = 8V 3.2A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 80m @ VGS = 4.5V 3.0A Halogen and Antimony Free. Green Device (Note 3) Description Mecha

 7.1. Size:333K  diodes
 dmn3110s.pdf

DMN3110LCP3 DMN3110LCP3

DMN3110SN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 73m @ VGS = 10V 3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 30V 110m @ VGS = 4.5V 2.7A Quali

 7.2. Size:120K  tysemi
 dmn3110s.pdf

DMN3110LCP3 DMN3110LCP3

Product specificationDMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID maxV(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 73m @ VGS = 10V 3.3A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 30V 110m @ VGS = 4.5V 2.7A Qualified to AEC-Q101 sta

 8.1. Size:187K  diodes
 dmn3112sss.pdf

DMN3110LCP3 DMN3110LCP3

DMN3112SSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 57m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D

 8.2. Size:178K  diodes
 dmn3112s.pdf

DMN3110LCP3 DMN3110LCP3

DMN3112SN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23 57m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-02

 8.3. Size:112K  diodes
 dmn3115udm.pdf

DMN3110LCP3 DMN3110LCP3

DMN3115UDMN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-26 60 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 80 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020 130 m @ VGS = 1.5V Terminal Connections:

 8.4. Size:80K  tysemi
 dmn3112s.pdf

DMN3110LCP3 DMN3110LCP3

Product specification DMN3112SN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT2357m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals: Finis

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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