All MOSFET. DMN61D8L Datasheet

 

DMN61D8L MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN61D8L
   Marking Code: 1D8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.74 nC
   trⓘ - Rise Time: 301 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: SOT23

 DMN61D8L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN61D8L Datasheet (PDF)

 ..1. Size:545K  diodes
 dmn61d8l dmn61d8lvt.pdf

DMN61D8L DMN61D8L

DMN61D8L/LVT Product Summary Features and Benefits ID max Provides a more reliable and robust interface between sensitive V(BR)DSS RDS(ON) max TA = +25C logic and DC relay coils. Replaces 3-4 discrete components enabling PCB footprint to be 1.8 @ VGS = 5V 60V 470mA reduced. 2.4 @ VGS = 3V Internal active clamp removes the need for external zener diode.

 0.1. Size:505K  diodes
 dmn61d8lq.pdf

DMN61D8L DMN61D8L

DMN61D8LQ INTEGRATED RELAY AND INDUCTIVE LOAD DRIVER Product Summary Features and Benefits Provides A More Reliable And Robust Interface Between ID Max Sensitive Logic And DC Relay Coils BVDSS RDS(ON) Max TA = +25 Replaces 3 to 4 Discrete Components Enabling PCB Footprint C To Be Reduced 1.8 @ VGS = 5V 60V 470mA Internal Active Clamp Removes The Need For E

 8.1. Size:480K  diodes
 dmn61d9uw.pdf

DMN61D8L DMN61D8L

DMN61D9UW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 2 @ VGS = 5.0V 340mA 60V Fast Switching Speed 300mA 2.5 @ VGS = 2.5V Low Input/Output Leakage ESD Protected Up To 2kV Description Totally Lead-Free & Fully RoHS Compliant (Not

 9.1. Size:552K  diodes
 dmn6140l.pdf

DMN61D8L DMN61D8L

DMN6140L 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance Fast Switching Speed 140m @ VGS = 10V 2.3A 60V Low Input/Output Leakage 170m @ VGS = 4.5V 2.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gr

 9.2. Size:530K  diodes
 dmn6140lq.pdf

DMN61D8L DMN61D8L

DMN6140LQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance Fast Switching Speed 140m @ VGS = 10V 2.3A 60V Low Input/Output Leakage 170m @ VGS = 4.5V 2.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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