Справочник MOSFET. DMN61D8L

 

DMN61D8L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DMN61D8L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.61 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.47 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 301 ns
   Cossⓘ - Выходная емкость: 17 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
   Тип корпуса: SOT23
     - подбор MOSFET транзистора по параметрам

 

DMN61D8L Datasheet (PDF)

 ..1. Size:545K  diodes
dmn61d8l dmn61d8lvt.pdfpdf_icon

DMN61D8L

DMN61D8L/LVT Product Summary Features and Benefits ID max Provides a more reliable and robust interface between sensitive V(BR)DSS RDS(ON) max TA = +25C logic and DC relay coils. Replaces 3-4 discrete components enabling PCB footprint to be 1.8 @ VGS = 5V 60V 470mA reduced. 2.4 @ VGS = 3V Internal active clamp removes the need for external zener diode.

 0.1. Size:505K  diodes
dmn61d8lq.pdfpdf_icon

DMN61D8L

DMN61D8LQ INTEGRATED RELAY AND INDUCTIVE LOAD DRIVER Product Summary Features and Benefits Provides A More Reliable And Robust Interface Between ID Max Sensitive Logic And DC Relay Coils BVDSS RDS(ON) Max TA = +25 Replaces 3 to 4 Discrete Components Enabling PCB Footprint C To Be Reduced 1.8 @ VGS = 5V 60V 470mA Internal Active Clamp Removes The Need For E

 8.1. Size:480K  diodes
dmn61d9uw.pdfpdf_icon

DMN61D8L

DMN61D9UW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 2 @ VGS = 5.0V 340mA 60V Fast Switching Speed 300mA 2.5 @ VGS = 2.5V Low Input/Output Leakage ESD Protected Up To 2kV Description Totally Lead-Free & Fully RoHS Compliant (Not

 9.1. Size:552K  diodes
dmn6140l.pdfpdf_icon

DMN61D8L

DMN6140L 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance Fast Switching Speed 140m @ VGS = 10V 2.3A 60V Low Input/Output Leakage 170m @ VGS = 4.5V 2.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gr

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MRF157 | KP103M | 2SK3572-Z | IPI50R380CE | NTJS3151P | VSA030C03LD | SM1F04NSF

 

 
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