FHA150N06C Datasheet and Replacement
Type Designator: FHA150N06C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 290 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 118 nC
tr ⓘ - Rise Time: 101 nS
Cossⓘ - Output Capacitance: 2100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: TO-3PN
FHA150N06C substitution
FHA150N06C Datasheet (PDF)
..1. Size:765K feihonltd
fha150n06c.pdf
fha150n06c.pdf
N N-CHANNEL MOSFET FHA150N06C MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 55 V Crss ( 850pF) Low Crss (typical 850pF ) Rdson-typ @Vgs=10V 7.2 m Fast switching Qg-typ 118nC 100% 100% avalanche tested dv/dt Improved
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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