FHD15N10A MOSFET. Datasheet pdf. Equivalent
Type Designator: FHD15N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 15.6 nC
trⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 41 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO-252
FHD15N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHD15N10A Datasheet (PDF)
fhd150.pdf
FHD150 NPN B C D E F G PCM Tc=25 150 W ICM 15 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=2mA 50 100 150 200 250 300 V V(BR)CEO ICE=2mA 50 100 150 200 250 300 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA VBEsat 3.0 V
fhd150n03b.pdf
N N-CHANNEL MOSFET FHD150N03B MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 30 V Crss ( 405pF) Low Crss (typical 405pF ) Rdson-typ @Vgs=10V 2.2m Fast switching Rdson-typ @Vgs=4.5V 2.8m 100% 100% avalanche tested Qg-typ
fhp150n03a fhs150n03a fhd150n03a.pdf
N N-CHANNEL MOSFET FHP150N03A/FHS150N03A/FHD150N03A MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 30V Crss ( 314pF) Low Crss (typical 314pF ) Rdson-typ @Vgs=10V 2.5m Fast switching Rdson-typ @Vgs=4.5V 3.2m 100% 100% avalanc
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
