FHD18P10A Specs and Replacement
Type Designator: FHD18P10A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO-252
FHD18P10A substitution
FHD18P10A datasheet
fhd18p10a.pdf
P P-CHANNEL MOSFET FHD18P10A MAIN CHARACTERISTICS FEATURES ID -18 A Low gate charge VDSS -100 V Crss ( 75pF) Low Crss (typical 75pF ) Rdson-typ @Vgs=-10V 92m Fast switching Rdson-typ @Vgs=-4.5V 95m 100% 100% avalanche tested Qg-typ 37... See More ⇒
Detailed specifications: FHA20N50A , FHA20N90A , FHA24N50A , FHA28N50A , FHA86N30A , FHA9N90D , FHD150N03B , FHD15N10A , IRF1404 , FHD80N07C , FHF10N80A , FHF18N50A , FHF18N50C , FHF20N60A , FHP20N60A , FHA20N60A , FHF20N65A .
Keywords - FHD18P10A MOSFET specs
FHD18P10A cross reference
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FHD18P10A replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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