All MOSFET. FHD18P10A Datasheet

 

FHD18P10A Datasheet and Replacement


   Type Designator: FHD18P10A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO-252
 

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FHD18P10A Datasheet (PDF)

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FHD18P10A

P P-CHANNEL MOSFET FHD18P10A MAIN CHARACTERISTICS FEATURES ID -18 A Low gate charge VDSS -100 V Crss ( 75pF) Low Crss (typical 75pF ) Rdson-typ @Vgs=-10V 92m Fast switching Rdson-typ @Vgs=-4.5V 95m 100% 100% avalanche tested Qg-typ 37

Datasheet: FHA20N50A , FHA20N90A , FHA24N50A , FHA28N50A , FHA86N30A , FHA9N90D , FHD150N03B , FHD15N10A , IRF1404 , FHD80N07C , FHF10N80A , FHF18N50A , FHF18N50C , FHF20N60A , FHP20N60A , FHA20N60A , FHF20N65A .

History: 2SJ609 | 8N60KG-TF3T-T | HFS18N50U | 2SK1825 | MTN7000ZA3 | 2SK2393 | 2SK1818-MR

Keywords - FHD18P10A MOSFET datasheet

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