All MOSFET. FHD18P10A Datasheet

 

FHD18P10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHD18P10A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 37 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO-252

 FHD18P10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHD18P10A Datasheet (PDF)

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 fhd18p10a.pdf

FHD18P10A FHD18P10A

P P-CHANNEL MOSFET FHD18P10A MAIN CHARACTERISTICS FEATURES ID -18 A Low gate charge VDSS -100 V Crss ( 75pF) Low Crss (typical 75pF ) Rdson-typ @Vgs=-10V 92m Fast switching Rdson-typ @Vgs=-4.5V 95m 100% 100% avalanche tested Qg-typ 37

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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