FHA20N60A Specs and Replacement
Type Designator: FHA20N60A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 252 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-3PN
FHA20N60A substitution
- MOSFET ⓘ Cross-Reference Search
FHA20N60A datasheet
fha20n90a.pdf
N N-CHANNEL MOSFET FHA20N90A MAIN CHARACTERISTICS FEATURES ID 20A Low gate charge VDSS 900 V Crss ( 18.3pF) Low Crss (typical 18.3pF ) Rdson-typ @Vgs=10V 0.28 Fast switching Qg-typ 140.5nC 100% 100% avalanche tested dv/dt Impro... See More ⇒
Detailed specifications: FHD15N10A , FHD18P10A , FHD80N07C , FHF10N80A , FHF18N50A , FHF18N50C , FHF20N60A , FHP20N60A , IRF3710 , FHF20N65A , FHP20N65A , FHA20N65A , FHF2N60A , FHP2N60A , FHU2N60A , FHD2N60A , FHF2N60E .
History: FHF10N80A
Keywords - FHA20N60A MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FHF10N80A
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