SSH8N60 PDF and Equivalents Search

 

SSH8N60 Specs and Replacement

Type Designator: SSH8N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO3P

SSH8N60 substitution

- MOSFET ⓘ Cross-Reference Search

 

SSH8N60 datasheet

 9.1. Size:935K  samsung
 ssh8n80a.pdf pdf_icon

SSH8N60

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Sy... See More ⇒

 9.2. Size:937K  samsung
 ssh8n90a.pdf pdf_icon

SSH8N60

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.247 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

 9.3. Size:272K  semelab
 ssh8n70 ssh8n80.pdf pdf_icon

SSH8N60

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Detailed specifications: SSH6N80AS, SSH6N90A, SSH70N10A, SSH7N60A, SSH7N80A, SSH7N90A, SSH80N06A, SSH8N55, NCEP15T14, SSH8N80A, SSH8N90A, SSH9N80A, SSH9N90A, SSI1N50A, SSI1N60A, SSI2N60A, SSI2N80A

Keywords - SSH8N60 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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