SSH8N80A MOSFET Datasheet: N-Ch, 800V, 8A. Full specification with pinout and replacement list

SSH8N80A Specs and Replacement

Type Designator: SSH8N80A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO3P

SSH8N80A substitution

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SSH8N80A datasheet

..1. Size:935K samsung
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Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Sy... See More ⇒

7.1. Size:272K semelab
ssh8n70 ssh8n80.pdf pdf_icon

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9.1. Size:937K samsung
ssh8n90a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.247 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

Detailed specifications: SSH6N90A, SSH70N10A, SSH7N60A, SSH7N80A, SSH7N90A, SSH80N06A, SSH8N55, SSH8N60, AON7506, SSH8N90A, SSH9N80A, SSH9N90A, SSI1N50A, SSI1N60A, SSI2N60A, SSI2N80A, SSI2N90A