All MOSFET. SSH8N80A Datasheet

 

SSH8N80A Datasheet and Replacement


   Type Designator: SSH8N80A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO3P
 

 SSH8N80A substitution

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SSH8N80A Datasheet (PDF)

 ..1. Size:935K  samsung
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SSH8N80A

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1000 (Typ.)1231.Gate 2. Drain 3. Source1.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSy

 7.1. Size:272K  semelab
 ssh8n70 ssh8n80.pdf pdf_icon

SSH8N80A

 9.1. Size:937K  samsung
 ssh8n90a.pdf pdf_icon

SSH8N80A

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.247 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Datasheet: SSH6N90A , SSH70N10A , SSH7N60A , SSH7N80A , SSH7N90A , SSH80N06A , SSH8N55 , SSH8N60 , IRFP250 , SSH8N90A , SSH9N80A , SSH9N90A , SSI1N50A , SSI1N60A , SSI2N60A , SSI2N80A , SSI2N90A .

History: NTMS5835NLR2G

Keywords - SSH8N80A MOSFET datasheet

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