FHF4N90A Specs and Replacement
Type Designator: FHF4N90A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-220F
FHF4N90A substitution
- MOSFET ⓘ Cross-Reference Search
FHF4N90A datasheet
fhf4n90a.pdf
N N-CHANNEL MOSFET FHF4N90A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 900V Crss ( 7.4pF) Low Crss (typical 7.4pF ) Rdson-typ @Vgs=10V 2.6 Fast switching Qg-typ 25.2nC 100% 100% avalanche tested dv/dt Improved dv/... See More ⇒
fhu4n60a fhp4n60a fhd4n60a fhf4n60a.pdf
N N-CHANNEL MOSFET FHU4N60A/FHP4N60A/FHD4N60A/FHF4N60A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 600V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.7 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested ... See More ⇒
fhu4n65d fhd4n65d fhp4n65d fhf4n65d.pdf
N N-CHANNEL MOSFET FHU4N65D/FHD4N65D/FHP4N65D/FHF4N65D MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested ... See More ⇒
Detailed specifications: FHF2N60E , FHP2N60E , FHU2N60E , FHD2N60E , FHF2N65A , FHP2N65A , FHU2N65A , FHD2N65A , IRF4905 , FHF8N80B , FHP100N03A , FHP100N07A , FHP100N08A , FHP10N60A , FHF10N60A , FHP10N65A , FHF10N65A .
History: FHD80N08B
Keywords - FHF4N90A MOSFET specs
FHF4N90A cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FHD80N08B
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