FHF4N90A MOSFET. Datasheet pdf. Equivalent
Type Designator: FHF4N90A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25.2 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 76 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-220F
FHF4N90A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHF4N90A Datasheet (PDF)
fhf4n90a.pdf
N N-CHANNEL MOSFET FHF4N90A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 900V Crss ( 7.4pF) Low Crss (typical 7.4pF ) Rdson-typ @Vgs=10V 2.6 Fast switching Qg-typ 25.2nC 100% 100% avalanche tested dv/dt Improved dv/
fhu4n60a fhp4n60a fhd4n60a fhf4n60a.pdf
N N-CHANNEL MOSFET FHU4N60A/FHP4N60A/FHD4N60A/FHF4N60A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 600V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.7 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested
fhu4n65d fhd4n65d fhp4n65d fhf4n65d.pdf
N N-CHANNEL MOSFET FHU4N65D/FHD4N65D/FHP4N65D/FHF4N65D MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested
fhu4n65b fhp4n65b fhd4n65b fhf4n65b.pdf
N N-CHANNEL MOSFET FHU4N65B/FHP4N65B/FHD4N65B/FHF4N65B MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 3.5pF) Low Crss (typical 3.5pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested
fhu4n65a fhp4n65a fhd4n65a fhf4n65a.pdf
N N-CHANNEL MOSFET FHU4N65A/FHP4N65A/FHD4N65A/FHF4N65A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.9 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested
fhu4n65e fhd4n65e fhp4n65e fhf4n65e.pdf
N N-CHANNEL MOSFET FHU4N65E/FHD4N65E/FHP4N65E/FHF4N65E MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650 V Crss ( 4.5pF) Low Crss (typical 4.5pF ) Rdson-typ @Vgs=10V 2.1 Fast switching Qg-typ 18nC 100% 100% avalanche tested dv
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: STV7NA40 | 2N7002BKV
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918