All MOSFET. FHP12N60A Datasheet

 

FHP12N60A MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHP12N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 231 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 12 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 52 nC
   Rise Time (tr): 90 nS
   Drain-Source Capacitance (Cd): 180 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
   Package: TO-220

 FHP12N60A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHP12N60A Datasheet (PDF)

 ..1. Size:784K  feihonltd
 fhp12n60a fhf12n60a.pdf

FHP12N60A FHP12N60A

N N-CHANNEL MOSFET FHP12N60A/ FHF12N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 600V Fast switching Rdson-typ 0.6 @Vgs=10V 100% 100% avalanche tested Qg-typ 52nC dv/dt Im

 6.1. Size:158K  1
 fhp12n60.pdf

FHP12N60A FHP12N60A

FHP12N60FHP12N60 N MOSAC-DCDC-DCHPMW 12A,600V,RDS(on)(0.6 TC=25 VDS

 7.1. Size:782K  feihonltd
 fhp12n65c fhf12n65c.pdf

FHP12N60A FHP12N60A

N N-CHANNEL MOSFET FHP12N65C/ FHF12N65C MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.63 @Vgs=10V 100% 100% avalanche tested Qg-typ 52nC dv/dt I

 9.1. Size:802K  feihonltd
 fhp120n08d.pdf

FHP12N60A FHP12N60A

N N-CHANNEL MOSFET FHP120N08D MAIN CHARACTERISTICS FEATURES ID 120 A Low gate charge VDSS 80 V Crss ( 190pF) Low Crss (typical 190pF ) Rdson-typ @Vgs=10V 6.0 m Fast switching Qg-typ 60nC 100% 100% avalanche tested dv/dt Improve

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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