FHU50N06D Datasheet and Replacement
Type Designator: FHU50N06D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-251
FHU50N06D substitution
FHU50N06D Datasheet (PDF)
fhp50n06 fhu50n06d fhd50n06d.pdf

N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt
Datasheet: FHU2N65D , FHD2N65D , FHP3205C , FHP3710C , FHP40N20A , FHP40N20C , FHP4410A , FHP50N06 , IRF730 , FHD50N06D , FHP50N06A , FHP50N06C , FHP540A , FHP540C , FHP60N06B , FHP640A , FHP6N90A .
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