SSI1N60A PDF and Equivalents Search

 

SSI1N60A Specs and Replacement

Type Designator: SSI1N60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: I2PAK

SSI1N60A substitution

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SSI1N60A datasheet

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SSI1N60A

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SSI1N60A

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Detailed specifications: SSH80N06A, SSH8N55, SSH8N60, SSH8N80A, SSH8N90A, SSH9N80A, SSH9N90A, SSI1N50A, BS170, SSI2N60A, SSI2N80A, SSI2N90A, SSI3N80A, SSI3N90A, SSI4N60A, SSI4N80A, SSI4N80AS

Keywords - SSI1N60A MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

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