FHP6N90A Datasheet and Replacement
Type Designator: FHP6N90A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 111 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-220
FHP6N90A substitution
FHP6N90A Datasheet (PDF)
fhp6n90a fhf6n90a.pdf

N N-CHANNEL MOSFET FHP6N90A /FHF6N90A MAIN CHARACTERISTICS FEATURES ID 6A Low gate charge VDSS 900V Crss ( 11pF) Low Crss (typical 11pF ) Rdson-typ @Vgs=10V 1.5 Fast switching Qg-typ 34nC 100% 100% avalanche tested dv/dt Improv
Datasheet: FHU50N06D , FHD50N06D , FHP50N06A , FHP50N06C , FHP540A , FHP540C , FHP60N06B , FHP640A , AON7403 , FHF6N90A , FHP730A , FHF730A , FHP740A , FHP740C , FHP75N100A , FHP75N75A , FHP7N60A .
History: SI5515CDC | SJMN850R80ZF
Keywords - FHP6N90A MOSFET datasheet
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History: SI5515CDC | SJMN850R80ZF



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