All MOSFET. FHP6N90A Datasheet

 

FHP6N90A MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHP6N90A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 111 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-220

 FHP6N90A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHP6N90A Datasheet (PDF)

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 fhp6n90a fhf6n90a.pdf

FHP6N90A FHP6N90A

N N-CHANNEL MOSFET FHP6N90A /FHF6N90A MAIN CHARACTERISTICS FEATURES ID 6A Low gate charge VDSS 900V Crss ( 11pF) Low Crss (typical 11pF ) Rdson-typ @Vgs=10V 1.5 Fast switching Qg-typ 34nC 100% 100% avalanche tested dv/dt Improv

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