All MOSFET. SSI2N60A Datasheet

 

SSI2N60A Datasheet and Replacement


   Type Designator: SSI2N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: I2PAK
 

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SSI2N60A Datasheet (PDF)

 ..1. Size:218K  1
 ssi2n60a ssw2n60a.pdf pdf_icon

SSI2N60A

 7.1. Size:647K  fairchild semi
 ssi2n60b ssi2n60b ssw2n60b.pdf pdf_icon

SSI2N60A

November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored

 7.2. Size:648K  fairchild semi
 ssw2n60b ssi2n60b.pdf pdf_icon

SSI2N60A

November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored

 9.1. Size:204K  1
 ssi2n90a ssw2n90a.pdf pdf_icon

SSI2N60A

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Datasheet: SSH8N55 , SSH8N60 , SSH8N80A , SSH8N90A , SSH9N80A , SSH9N90A , SSI1N50A , SSI1N60A , 10N65 , SSI2N80A , SSI2N90A , SSI3N80A , SSI3N90A , SSI4N60A , SSI4N80A , SSI4N80AS , SSI4N90A .

History: PTW50N20

Keywords - SSI2N60A MOSFET datasheet

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